DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST50; BST51; BST52 NPN Darlington transistors Product specification Supersedes data of 2001 Feb 20 2004 Dec 09
Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 FEATURES PINNING • High current (max. 0.5 A) PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector 3 base DESCRIPTION APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. 2 3 DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complements: BST60, BST61 and BST62.
Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX.
Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector-emitter cut-off current BST50 VBE = 0 V; VCE = 45 V − − 50 nA BST51 VBE = 0 V; VCE = 60 V − − 50 nA BST52 VBE = 0 V; VCE = 80 V − − 50 nA IEBO emitter-base cut-off current IC = 0 A; VEB = 4 V − − 50 nA hFE DC current gain VCE = 10 V; note 1; (see Fig.
Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 MGD838 5000 handbook, full pagewidth hFE 4000 3000 2000 1000 0 10−1 102 10 1 VCE = 10 V. Fig.2 DC current gain; typical values. VCC VBB ndbook, full pagewidth RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi = 50 Ω.
Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date.
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