DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BST60; BST61; BST62 PNP Darlington transistors Product data sheet Supersedes data of 2001 Feb 20 2004 Dec 09
NXP Semiconductors Product data sheet PNP Darlington transistors BST60; BST61; BST62 FEATURES PINNING • High current (max. 0.5 A) PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector 3 base DESCRIPTION APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. 2 3 DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complements: BST50, BST51 and BST52.
NXP Semiconductors Product data sheet PNP Darlington transistors BST60; BST61; BST62 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet PNP Darlington transistors BST60; BST61; BST62 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector-emitter cut-off current BST60 VBE = 0 V; VCE = −45 V − − −50 nA BST61 VBE = 0 V; VCE = −60 V − − −50 nA BST62 VBE = 0 V; VCE = −80 V − − −50 nA IEBO emitter-base cut-off current IC = 0 A; VEB = −4 V − − −50 nA hFE DC current gain VCE = −10 V; note 1; see Fig.
NXP Semiconductors Product data sheet PNP Darlington transistors BST60; BST61; BST62 MGD839 6000 handbook, full pagewidth hFE 5000 4000 3000 2000 1000 0 −10−1 −1 −10 −102 VCE = −10 V. Fig.2 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = 1.8 V; VCC = −10.7 V.
NXP Semiconductors Product data sheet PNP Darlington transistors BST60; BST61; BST62 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet PNP Darlington transistors BST60; BST61; BST62 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
