Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsThyristors & TriacsBTA312-600C,127

1. Product proﬁle

1.1 General description

Passivated, new generation, high commutation triacs, in a SOT78 plastic package.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

BTA312 series B and C

12 A Three-quadrant triacs high commutation

Rev. 01 — 13 March 2007 Product data sheet

n Very high commutation performance

maximized at each gate sensitivity

n High immunity to dV/dt

n High power motor control e.g. washing

machines, vacuum cleaners

n Non-linear rectiﬁer-fed motor loads

n Refrigeration and air conditioning

compressors

n Electronic thermostats

n V

DRM

≤ 600 V (BTA312-600B/C) n I

≤ 50 mA (BTA312 series B)

n V

DRM

≤ 800 V (BTA312-800B/C) n I

≤ 35 mA (BTA312 series C)

n I

TSM

≤ 95 A (t = 20 ms) n I

T(RMS)

≤ 12 A

Table 1. Pinning

Pin Description Simpliﬁed outline Symbol

1 main terminal 1 (T1)

SOT78 (TO-220AB)

2 main terminal 2 (T2)

3 gate (G)

mb mounting base; main terminal 2 (T2)

sym051

Summary of content (12 pages)

PAGE 1
BTA312 series B and C 12 A Three-quadrant triacs high commutation Rev. 01 — 13 March 2007 Product data sheet 1. Product profile 1.1 General description Passivated, new generation, high commutation triacs, in a SOT78 plastic package. 1.2 Features n Very high commutation performance maximized at each gate sensitivity n High immunity to dV/dt 1.3 Applications n High power motor control e.g.
PAGE 2
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package BTA312-600B Name Description Version SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BTA312-600C BTA312-800B BTA312-800C 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 3
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab690 16 Ptot (W) conduction angle (degrees) form factor a α = 180° 30 60 90 120 180 4 2.8 2.2 1.9 1.57 120° 12 90° α 60° 30° 8 4 0 0 3 6 9 12 IT(RMS) (A) α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aab680 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles (n) f = 50 Hz Fig 2.
PAGE 4
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab691 103 ITSM (A) (1) 102 ITSM IT t tp Tj(init) = 25 °C max 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 003aab687 50 IT(RMS) (A) 003aab686 15 IT(RMS) (A) 40 10 30 20 5 10 0 10-2 10-1 1 10 surge duration (s) 0 -50 0 50 100 150 Tmb (°C) f = 50 Hz Tmb = 101 °C Fig 4.
PAGE 5
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to half cycle; see Figure 6 mounting base full cycle; see Figure 6 thermal resistance from junction to in free air ambient Rth(j-a) Min Typ Max Unit - - 2.0 K/W - - 1.
PAGE 6
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions BTA312-600B BTA312-800B Min IGT IL gate trigger current Typ BTA312-600C BTA312-800C Max Min Typ Unit Max VD = 12 V; IT = 0.
PAGE 7
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions BTA312-600B BTA312-800B BTA312-600C BTA312-800C Min Typ Max 1000 2000 - dIcom/dt rate of change VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; of without snubber; gate open circuit commutating current 30 - tgt - 2 dVD/dt rate of rise of off-state voltage VDM = 0.
PAGE 8
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 003aab678 40 001aab100 3 IT (A) IL IL(25°C) 30 2 20 1 (1) 10 (2) (3) 0 0 0.5 1 1.5 2 VT (V) 0 −50 2.5 0 50 100 150 Tj (°C) Vo = 1.127 V Rs = 0.027 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10.
PAGE 9
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 8. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1 L2 max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.45 1.00 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.
PAGE 10
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA312_SER_B_C_1 20070313 Product data sheet - - BTA312_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
PAGE 11
BTA312 series B and C NXP Semiconductors 12 A Three-quadrant triacs high commutation 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 12
NXP Semiconductors BTA312 series B and C 12 A Three-quadrant triacs high commutation 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .