Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 - 1500 V
V
CEO
Collector-emitter voltage - 800 V
(open base)
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 125 W
V
CEsat
Collector-emitter saturation voltage I
C
= 8.0 A; I
B
= 1.6 A - 5.0 V
I
Csat
Collector saturation current 8 - A
t
s
Storage time I
Csat
= 8.0 A; I
B(end)
= 1.1 A 3.0 4.0 µs
PINNING - SOT429 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
I
B
Base current (DC) - 8 A
I
BM
Base current peak value - 12 A
-I
B(AV)
Reverse base current average over any 20 ms period - 200 mA
-I
BM
Reverse base current peak value
1
-9A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 125 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - - 1.0 K/W
R
th j-a
Junction to ambient in free air 45 - K/W
2
3
1
b
c
e
Rbe
1 Turn-off current.
September 1997 1 Rev 1.100