Datasheet

Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 45 W
V
CEsat
Collector-emitter saturation voltage I
C
= 8.0 A; I
B
= 1.6 A - 5.0 V
I
Csat
Collector saturation current f = 64 kHz 6.0 - A
t
s
Storage time I
Csat
= 6.0 A; f = 64 kHz 1.7 2.0 µs
PINNING - SOT199 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
I
B
Base current (DC) - 8 A
I
BM
Base current peak value - 12 A
-I
B(AV)
Reverse base current average over any 20 ms period - 200 mA
-I
BM
Reverse base current peak value
1
-7A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 45 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Junction to heatsink without heatsink compound - 3.7 K/W
R
th j-hs
Junction to heatsink with heatsink compound - 2.8 K/W
R
th j-a
Junction to ambient in free air 35 - K/W
12
3
case
b
c
e
Rbe
1 Turn-off current.
September 1997 1 Rev 1.200