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DATA SHEET

Product specification March 2002

DISCRETE SEMICONDUCTORS

BUJ303B

Silicon Diffused Power Transistor

Summary of content (9 pages)

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DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002
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NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 MIN. TYP. MAX. UNIT VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C - - 1.0 2.0 mA mA - - 0.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B 100-200R ICon 90 % 90 % + 50v + VB IC 25 mH 10 % ts ton Pulse in Oscilloscope Horizontal 50R tf toff IBon IB 10 % Oscilloscope Vertical tr C.T. 30ns -IBoff Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC LC 400 300 IBon LB T.U.T. -VBB 0 min VCEOsust VCE / V Fig.5. Test circuit inductive load.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor Normalised Power Derating PD% 120 BUJ303B VBEsat (V) 1.4 110 100 1.2 90 80 1.0 70 0.8 60 50 0.6 40 0.4 30 20 0.2 10 0 0 0 20 40 60 80 100 Tmb / C 120 140 0.1 1.0 10.0 IC (A) Fig.10. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4. Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) 100 0.5 VCEsat (V) hFE 0.4 VCE = 5 V 0.3 10 VCE = 1 V 0.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B 102 VCC IC (A) Duty cycle = 0.01 LC ICM max IC max PROBE POINT IBon tp= 10 VCL(RBSOAR) LB 10us II T.U.T. -VBB (1) 100us 1 Fig.13. Test Circuit for reverse bias safe operating area. Vcl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH; Lc = 200µH (2) 1ms I 10-1 III 10ms DC 12 IC 10-2 (A) 10 8 1 10 102 103 VCE (V) Fig.15. Forward bias safe operating area.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.16. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 2002 6 Rev 1.
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NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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NXP Semiconductors Legal information NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s).