Datasheet

1. Product profile
1.1 General description
Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Compatable with logic and standard
level gate drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V Automotive systems
 Electric and electro-hydraulic power
steering
 Engine management
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
BUK6215-75C
N-channel TrenchMOS FET
Rev. 02 — 4 October 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 75 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
--57A
P
tot
total power
dissipation
T
mb
=25°C; see Figure 2 --128W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 11
-12.515mΩ