Datasheet

1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Suitable for standard and logic level
gate drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V Automotive systems
 Electric and electro-hydraulic power
steering
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
BUK625R2-30C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 12 July 2011 Product data sheet
DPAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 30 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
[1]
--90A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 --128W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A;
T
j
=25°C; see Figure 11
-4.45.2mΩ