Datasheet

BUK626R2-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 July 2011 4 of 14
NXP Semiconductors
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aae437
0
30
60
90
120
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
(1)
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
003aae720
10
-1
1
10
10
2
10
3
10
4
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100
μ
s
10 ms
t
p
= 10 μs
100 ms
1 ms