Datasheet

1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in high-performance automotive
applications.
1.2 Features and benefits
 AEC Q101 compliant
 High current handling capability, up to
320 A
 Low conduction losses due to very low
on-state resistance
 Suitable for standard and logic level
gate drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V automotive systems
 Electric and electro-hydraulic power
steering
 Motors, lamps and solenoids
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
BUK6C2R1-55C
N-channel TrenchMOS intermediate level FET
Rev. 3 — 18 January 2012 Product data sheet
D2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --55V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
- - 228 A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 - - 300 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=90A;
T
j
=25°C;
see Figure 11
-1.92.3mΩ