Datasheet

BUK7107-55ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 19 February 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
 Allows responsive temperature
monitoring due to integrated
temperature sensor
 Electrostatically robust due to
integrated protection diodes
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for standard level gate drive
sources
1.3 Applications
 Automotive and general purpose
power switching
 Electrical Power Assisted Steering
(EPAS)
 Fan control
 Variable Valve Timing for engines
1.4 Quick reference data
[1] Current is limited by power dissipation chip rating
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 55 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 2
; see Figure 3;
[1]
- - 140 A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 1 - - 272 W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=50A;
T
j
=25°C
-5.87mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=68A; V
sup
≤ 55 V;
R
GS
=50Ω; V
GS
=10V;
T
j(init)
= 25 °C; unclamped
- - 460 mJ