Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7226-75A,118, MOSFET

Table Of Contents

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1] Capped at 45 A due to bondwire.

BUK7226-75A

N-channel TrenchMOS standard level FET

Rev. 02 — 22 February 2008 Product data sheet

 175 °C rated  Low on-state resistance

 Q101 compliant  Standard level compatible

 12 V, 24 V and 42 V loads  Automotive systems

 General purpose power switching  Motors, lamps and solenoids

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C--75V

drain current V

=10V; T

=25°C;

see Figure 1 and 4

[1]

--45A

tot

total power dissipation T

=25°C; see Figure 2 --158W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=25A;

=25°C; see Figure 12 and

-2226mΩ

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source avalanche

energy

=45A; V

sup

≤ 75 V;

=50Ω; V

=10V;

j(init)

=25°C; unclamped

inductive load

--215mJ

Summary of content (13 pages)

PAGE 1
BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Simplified outline Graphic symbol D mb G mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [3] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [4] Refer to application note AN10273 for further information. 003aac178 60 03aa16 120 ID (A) Pder (%) (1) 40 80 20 40 0 0 0 50 100 150 Tmb (°C) 0 200 VGS 10V 50 P der = (1) Capped at 45 A due to bondwire. Fig 1.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 003aac179 103 ID (A) 10 μs Limit RDSon = VDS / ID 10 2 100 μs (1) 1 ms 10 10 ms DC 1 10-1 1 100 ms 102 10 103 VDS (V) Tmb = 25 °C; IDM is single pulse (1) Capped at 45 A due to bondwire. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 003aac180 1 δ = 0.5 Zth(j-mb) (K/W) 0.2 10-1 0.1 0.05 0.02 δ= P 10-2 tp T single shot t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 70 - - V ID = 0.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET Table 6. Characteristics …continued Symbol Parameter trr reverse recovery time IS = 20 A; dIS/dt = -100 A/μs; VGS = -10 V; VDS = 30 V; recovered charge Tj = 25 °C Qr Conditions Min Typ Max Unit - 53 - ns - 144 - nC - 48 - nC - 7.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 03aa35 10−1 ID (A) min 10−2 typ 03nb03 40 gfs (S) max 30 10−3 20 10−4 10 10−5 10−6 0 0 2 4 0 6 20 40 60 80 ID (A) VGS (V) T j = 25 °C;VDS = VGS T j = 25 °C;VDS = 25V Fig 8. Sub-threshold drain current as a function of gate-source voltage 03nb04 50 Fig 9.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 03nb07 60 RDSon (mΩ) 6 7 8 03nb25 2.4 9 10 VGS (V) = 5 a 50 1.6 40 30 0.8 20 10 0 50 100 150 0 −60 200 ID (A) T j = 25 °C a= Fig 12. Drain-source on-state resistance as a function of drain current; typical values 03nb02 10 VGS (V) 0 60 120 180 Tj (°C) R DSon R DSon (25°C ) Fig 13.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 03nb01 80 IS (A) 60 40 Tj = 175 °C 20 Tj = 25 °C 0 0 0.4 0.8 1.2 VSD (V) VGS = 0V Fig 16. Reverse diode current; typical values BUK7226-75A_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.
PAGE 11
BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7226-75A_2 20080222 Product data sheet - BUK7226_75A-01 Modifications: BUK7226_75A-01 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK7226-75A NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . .