Datasheet

BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 2 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
2. Pinning information
3. Ordering information
4. Limiting values
[1] Capped at 45 A due to bondwire.
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT428 (DPAK)
2 D drain
3 S source
mb D mounting base;
connected to drain
3
2
mb
1
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK7226-75A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead
cropped)
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C-75V
V
DGR
drain-gate voltage R
GS
=20kΩ -75V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
= 10 V; see Figure 1 and 4
[1]
-45A
T
mb
= 100 °C; V
GS
= 10 V; see Figure 1 -38A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 μs; pulsed; see Figure 4 - 215 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 158 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=45A; V
sup
≤ 75 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
=25°C; unclamped
inductive load
- 215 mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[2][3]
[4]
--J
Source-drain diode
I
S
source current T
mb
=25°C
[1]
-45A
I
SM
peak source current t
p
≤ 10 μs; pulsed; T
mb
=25°C - 215 A