Datasheet

BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 4 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aac179
10
-1
1
10
10
2
10
3
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
1 ms
100 μs
10 μs
Limit R
DSon
= V
DS
/ I
D
(1)
T
mb
=25°C; I
DM
is single pulse
(1) Capped at 45 A due to bondwire.
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
minimum footprint; FR4 board - 70 - K/W
R
th(j-mb)
thermal resistance
from junction to
mounting base
see Figure 5 --1K/W