Datasheet

BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 5 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
6. Characteristics
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aac180
10
-3
10
-2
10
-1
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
0.02
single shot
0.05
0.1
0.2
t
p
T
P
t
t
p
T
δ =
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V;
T
j
=-55°C
70 - - V
I
D
=0.25mA; V
GS
=0V;
T
j
=25°C
75 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
;
T
j
= 175 °C; see Figure 11
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 11
234V
I
D
=1mA; V
DS
= V
GS
;
T
j
=-55°C; see Figure 11
--4.4V
I
DSS
drain leakage current V
DS
=75V; V
GS
=0V; T
j
=25°C - 0.05 10 μA
V
DS
=75V; V
GS
=0V;
T
j
= 175 °C
--500μA
I
GSS
gate leakage current V
DS
=0V; V
GS
=20V; T
j
=25°C - 2 100 nA
V
DS
=0V; V
GS
=-20V;
T
j
=25°C
-2100nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
= 175 °C; see Figure 12 and
13
--54mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 12
and 13
-2226mΩ
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
-0.851.2V