Datasheet

BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 7 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Forward transconductance as a function of
drain current; typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
I
D
(A)
0806020 40
03nb03
20
10
30
40
g
fs
(S)
0
T
j
=25°C;V
DS
= V
GS
T
j
=25°C;V
DS
=25V
03nb04
V
GS
(V)
0642
20
30
10
40
50
I
D
(A)
0
T
j
= 175 °C
T
j
= 25 °C
T
j
(°C)
−60 180120060
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
V
DS
=25V
I
D
=1mA;V
DS
= V
GS