Datasheet

BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 8 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
I
D
(A)
0 20015050 100
03nb07
30
40
20
50
60
R
DSon
(mΩ)
10
V
GS
(V) = 5
6 7 8 9 10
T
j
(°C)
−60 180120060
03nb25
0.8
1.6
2.4
a
0
T
j
=25°C
a =
R
DSon
R
DSon
(
25°C
)
03nb02
Q
G
(nC)
0604020
4
6
2
8
10
V
GS
(V)
0
V
DS
= 14 V
V
DS
= 60 V
03nb08
1000
2000
3000
C
(pF)
0
V
DS
(V)
10
−2
10
2
1010
−1
1
C
iss
C
oss
C
rss
T
j
=25°C; I
D
=25A
V
GS
=0V; f =1MHz