Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7515-100A,127, MOSFET

BUK7515-100A

N-channel TrenchMOS standard level FET

5 April 2014 Product data sheet

Scan or click this QR code to view the latest information for this product

1. General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

2. Features and benefits

•

AEC Q101 compliant

•

Low conduction losses due to low on-state resistance

3. Applications

•

Automotive and general purpose power switching

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 100 V

drain current - - 75 A

tot

total power dissipation

= 25 °C

- - 300 W

Static characteristics

DSon

drain-source on-state

resistance

= 10 V; I

= 25 A; T

= 25 °C - 12 15 mΩ

Avalanche ruggedness

DS(AL)S

non-repetitive drain-

source avalanche

energy

= 35 A; V

sup

≤ 25 V; R

= 50 Ω;

= 10 V; T

j(init)

= 25 °C; unclamped

- - 120 mJ

Summary of content (11 pages)

PAGE 1
TO -22 0 AB BUK7515-100A N-channel TrenchMOS standard level FET 5 April 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • • AEC Q101 compliant Low conduction losses due to low on-state resistance 3.
PAGE 2
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 TO-220AB (SOT78A) 6. Ordering information Table 3.
PAGE 3
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V Ptot total power dissipation - 300 W ID drain current - 75 A Tmb = 100 °C - 60.
PAGE 4
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf384 103 IDM (A) RDSon = VDS / ID tp = 10 µs 102 60 100 µs 1 ms 10 Fig. 3. 40 10 ms 1 20 100 ms D.C. 1 003aaf397 100 WDSS (%) 80 102 10 0 103 VDS (V) 20 60 100 140 Tmb (°C) 180 Tmb = 25 °C ID = 75 A Safe operating area; continuous and peak drain Fig. 4. currents as a function of drain-source voltage Normalised drain-source non-repetitive avalanche energy as a function of mountingbase temperature 8.
PAGE 5
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 89 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C 2 3 4 V ID = 1 mA; VDS = VGS; Tj = 175 °C 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C - - 4.
PAGE 6
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf386 300 10 ID (A) 9 RDS(on) (m ) VGS (V) = 20 17 7.5 200 100 6 4.5 0 2 4 6 8 6 6.5 7 8 15 13 5.5 Fig. 6. 5.5 7 6.5 0 003aaf387 19 8 5 VDS (V) 11 10 VGS (V) = 10 0 20 40 80 ID (A) 100 Tj = 25 °C Tj = 25 °C Fig. 7.
PAGE 7
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf392 5 VGS(th) (V) 4 maximum 3 2 typical 10- 3 minimum 10- 4 0 - 100 0 100 Tj (°C) 10- 6 200 ID = 1 mA; VDS = VGS typical 98 % 0 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13.
PAGE 8
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78A A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.
PAGE 9
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. Legal information 11.
PAGE 10
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
PAGE 11
BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 12. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information .............................