Datasheet

NXP Semiconductors
BUK751R8-40E
N-channel TrenchMOS standard level FET
BUK751R8-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 September 2012 4 / 13
003aag343
10
-1
1
10
10
2
10
3
10
-3
10
-2
10
-1
1 10
t
AL
(ms)
I
AL
(A)
(1)
(2)
(3)
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
003aai067
10
-1
1
10
10
2
10
3
10
4
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100
µ
s
10 ms
t
p
=10
µ
s
100 ms
1 ms
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5 - - 0.43 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
vertical in still air - 60 - K/W