Datasheet
NXP Semiconductors
BUK753R1-40E
N-channel TrenchMOS standard level FET
BUK753R1-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 September 2012 3 / 13
Symbol Parameter Conditions Min Max Unit
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - 234 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
= 25 °C [1] - 100 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 798 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 100 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 3
[2][3] - 419 mJ
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
003aah195
0
50
100
150
200
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
(1)
(1) Capped at 120A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature