Datasheet

BUK755R2-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 January 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
[1] Continuous current is limited by package.
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
; see Figure 3;
[1]
--75A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 203 W
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=75A; V
sup
≤ 40 V;
R
GS
=50Ω; V
GS
=10V;
T
j(init)
= 25 °C; unclamped
- - 494 mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=25A;
V
DS
=32V; T
j
=25°C; see
Figure 14
-16-nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=25A;
T
j
= 25 °C; see Figure 11;
see Figure 12
-4.45.2mΩ