Datasheet

BUK7604-40A
N-channel TrenchMOS standard level FET
Rev. 03 — 31 May 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive and general purpose
power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175°C --40V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 3
; see Figure 1
[1]
--75A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --300W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=175°C;
see Figure 11; see Figure 12
--8.5mΩ
V
GS
=10V; I
D
=25A;
T
j
=25°C;
see Figure 11; see Figure 12
-3.94.5mΩ
Avalanche ruggedness