Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7606-55B,118, MOSFET

BUK7606-55B

N-channel TrenchMOS standard level FET

Rev. 02 — 21 June 2010 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

 Q101 compliant

 Suitable for standard level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V and 24 V loads

 Automotive systems

 General purpose power switching

 Motors, lamps and solenoids

Summary of content (14 pages)

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BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 — 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 - - 75 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 254 W VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 5.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03nl98 150 03na19 120 ID (A) Pder (%) 80 100 Capped at 75 A due to package 40 50 0 0 0 50 100 150 200 0 50 100 Fig 1. 150 200 Tmb (°C) Tmb (°C) Normalized continuous drain current as a function of mounting base temperature Fig 2.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 0.59 K/W Rth(j-a) thermal resistance from junction to ambient minimum footprint; mounted on a printed-circuit board - - 50 K/W 03nl97 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10−1 0.1 0.05 0.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03nl93 350 9 20 ID (A) 8 10 Label is VGS (V) 03nl92 12 RDSon (mΩ) 7.5 280 10 7 210 6.5 140 8 6 5.5 6 70 5 4.5 4 0 0 2 4 6 8 10 5 10 15 VDS (V) Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03nl91 100 03aa32 5 VGS(th) (V) ID (A) 4 max 75 3 typ 50 Tj = 175 °C 2 min 25 1 Tj = 25 °C 0 0 2 4 6 VGS (V) Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values 0 −60 60 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03nl94 14 0 03ne89 2 Label is VGS (V) RDSon (mΩ) a 6 7 12 1.5 10 1 8 8 10 6 4 0.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03nl89 10 03nl95 6000 VGS (V) C (pF) 8 Ciss VDD = 14 V 4000 VDD = 44 V 6 Coss 4 2000 Crss 2 0 0 20 40 60 0 10−2 80 10−1 1 102 10 VDS (V) QG (nC) Fig 13. Gate-source voltage as a function of turn-on gate charge; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03nl88 100 IS (A) 75 50 Tj = 175 °C 25 Tj = 25 °C 0 0.0 0.3 0.6 0.9 1.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7606-55B v.2 20100621 Product data sheet - BUK75_7606_55B v.1 Modifications: BUK75_7606_55B v.1 BUK7606-55B Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
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BUK7606-55B NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .2 Pinning information . . . . . . . . .