Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7606-75B,118, MOSFET

BUK75/7606-75B

TrenchMOS™ standard level FET

Rev. 02 — 20 September 2002 Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive TrenchMOS™ technology.

Product availability:

BUK7506-75B in SOT78 (TO-220AB)

BUK7606-75B in SOT404 (D

-PAK).

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

■ Very low on-state resistance. ■ Q101 compliant

■ 175 °C rated ■ Standard level compatible.

■ Automotive systems ■ 12 V, 24 V, and 42 V loads

■ Motors, lamps and solenoids ■ General purpose power switching.

■ E

DS(AL)S

≤ 852 mJ ■ R

DSon

= 4.8 mΩ (typ)

■ I

≤ 75 A ■ P

tot

≤ 300 W.

Table 1: Pinning - SOT78 and SOT404 simpliﬁed outlines and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB) SOT404 (D

-PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base,

connected to

drain (d)

MBK106

MBK116

MBB076

Summary of content (15 pages)

PAGE 1
BUK75/7606-75B TrenchMOS™ standard level FET Rev. 02 — 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features ■ Very low on-state resistance. ■ 175 °C rated ■ Q101 compliant ■ Standard level compatible. 1.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 3
BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 03na19 120 03ng89 ID 180 (A) 160 Pder (%) 140 120 80 100 80 60 40 Capped at 75 A due to package 40 20 0 0 0 50 100 150 25 200 Tmb (°C) 50 75 100 125 150 175 200 Tmb (ºC) VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Figure 4 - - 0.5 K/W SOT78 vertical in still air - 60 - K/W SOT404 mounted on a printed circuit board; minimum footprint 50 - K/W Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient 4.1 Transient thermal impedance 03ng88 1 Zth(j-mb) (K/W) δ = 0.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET Table 4: Characteristics…continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 40 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V 86 - ns 253 - nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 03ng98 400 8 20 ID (A) RDSon 7 10 03ng97 8 (mΩ) 6.5 7 300 6 200 5.5 5 100 VGS = 4.5 V 4 0 0 2 4 6 8 5 10 VDS (V) Tj = 25 °C; tp = 300 µs 10 15 VGS (V) 20 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03ng99 14 RDSon VGS = 4.5 V (mΩ) Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 03aa32 5 03aa35 10-1 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 0 60 120 Tj (°C) 180 min 0 2 typ max 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 03ng96 100 ID (A) 03ng94 10 VGS (V) 80 8 60 6 VDD = 14 V VDD = 60 V 40 4 20 2 Tj = 175 ºC Tj = 25 ºC 0 0 0 2 4 VGS (V) 6 0 20 40 60 80 100 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values.
PAGE 10
BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.
PAGE 11
BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 7. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 10278 Product data Rev.
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BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 8. Revision history Table 5: Revision history Rev Date 02 20020920 CPCN Description - Product data (9397 750 10278) Modifications: • Description in Section 1 changed from: N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
PAGE 14
BUK75/7606-75B Philips Semiconductors TrenchMOS™ standard level FET 9. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
PAGE 15
Philips Semiconductors BUK75/7606-75B TrenchMOS™ standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . .