Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7607-30B,118, MOSFET

BUK75/7607-30B

TrenchMOS™ standard level FET

Rev. 01 — 07 April 2003 Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability:

BUK7507-30B in SOT78 (TO-220AB)

BUK7607-30B in SOT404 (D

-PAK).

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

■ Very low on-state resistance ■ Q101 compliant

■ 175 °C rated ■ Standard level compatible.

■ Automotive systems ■ 12 V loads

■ Motors, lamps and solenoids ■ General purpose power switching.

■ E

DS(AL)S

≤ 329 mJ ■ R

DSon

= 5.9 mΩ (typ)

■ I

≤ 75 A ■ P

tot

≤ 157 W.

Table 1: Pinning - SOT78 and SOT404 simpliﬁed outlines and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB) SOT404 (D

-PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base,

connected to

drain (d)

MBK106

MBK116

MBB076

Summary of content (15 pages)

PAGE 1
BUK75/7607-30B TrenchMOS™ standard level FET Rev. 01 — 07 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7507-30B in SOT78 (TO-220AB) BUK7607-30B in SOT404 (D2-PAK). 1.2 Features ■ Very low on-state resistance ■ 175 °C rated ■ Q101 compliant ■ Standard level compatible. 1.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 03na19 120 03nm94 120 Capped at 75 A due to package Pder ID (A) (%) 80 80 40 40 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Figure 4 - - 0.95 K/W SOT78 (TO-220AB) vertical in still air - - 60 K/W SOT404 (D2-PAK) minimum footprint; mounted on a PCB - - 50 K/W Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient 4.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.
PAGE 6
BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET Table 4: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 20 V 46 - ns 28 - nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 03nm89 300 10 20 ID (A) 03nk83 12 Label VGS (V) RDSon (mΩ) 9.5 10 9 200 8.5 8 8 7.5 7 100 6.5 6 6 5.5 5 4.5 4 0 0 2 4 6 8 5 10 VDS (V) Tj = 25 °C; tp = 300 µs 15 03aa27 2 Label is VGS (V) 7 20 VGS (V) Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nm90 6 6.5 RDSon (mΩ) 15 Tj = 25 °C; ID = 25 A Fig 5.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 03aa32 5 03aa35 10-1 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 0 60 120 Tj (°C) 180 min 0 typ 2 max 4 VGS (V) 6 Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nm86 40 Fig 10. Sub-threshold drain current as a function of gate-source voltage.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 03nm87 100 03nm85 10 VGS ID (A) (V) 8 VDD = 14 V 75 VDD = 24 V 6 50 4 25 Tj = 175 °C 2 Tj = 25 °C 0 0 0 2 4 6 VGS (V) 8 0 10 20 30 QG (nC) 40 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03nm84 100 IS (A) 75 50 Tj = 175 °C 25 Tj = 25 °C 0 0.0 0.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.
PAGE 11
BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 7. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11232 Product data Rev.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 8. Revision history Table 5: Revision history Rev Date 01 20030407 CPCN Description - Product data (9397 750 11232) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11232 Product data Rev.
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BUK75/7607-30B Philips Semiconductors TrenchMOS™ standard level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
PAGE 15
Philips Semiconductors BUK75/7607-30B TrenchMOS™ standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . .