Datasheet

BUK7610-100B
N-channel TrenchMOS standard level FET
6 July 2012 Product data sheet
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1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
•
Low conduction losses due to low on-state resistance
•
Q101 compliant
•
Suitable for standard level gate drive sources
•
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
•
12 V, 24 V and 42 V loads
•
Automotive systems
•
General purpose power switching
•
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
= 10 V; T
mb
= 25 °C; Fig. 1; Fig. 3 [1] - - 75 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 300 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11; Fig. 12
- 8.6 10 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C; Fig. 13
- 22 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 75 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
- - 629 mJ