Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK762R0-40C,118, MOSFET

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in

Automotive critical applications.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1] Continuous current is limited by package.

[2] Refer to document 9397 750 12572 for further information.

BUK762R0-40C

N-channel TrenchMOS standard level FET

Rev. 02 — 20 August 2007 Product data sheet

 175 °C rated  Low on-state resistance

 Q101 compliant  Standard level compatible

 12 V loads  Automotive systems

 General purpose power switching  Motors, lamps, solenoids

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain current V

=10V; T

=25°C;

see Figure 1 and 4

[1][2]

--100A

tot

total power dissipation T

=25°C; see Figure 2 --333W

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=25A;

=25°C; see Figure 13 and

-1.72mΩ

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source avalanche

energy

=100A; V

sup

≤ 40 V;

=50Ω; V

=10V;

j(init)

=25°C; inductive load

type unclamped inductive load

--1.2J

Summary of content (15 pages)

PAGE 1
BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications. 1.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Simplified outline Graphic Symbol D mb [1] G mbb076 S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Table 3.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET Table 4. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Source-drain diode source current IS peak source current ISM Tmb = 25 °C [1] - 276 A Tmb = 25 °C [2][3] - 100 A - 1104 A tp ≤ 10 μs; duty type pulsed; Tmb = 25 °C [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab013 103 IAL (A) 102 (1) (2) 10 (3) 1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Singleípulse; Tmb = 25 °C. (2) Singleípulse; Tmb = 150 °C. (3) Repetitive. Fig 3.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board; minimum footprint; vertical in still air - 50 - K/W Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - - 0.45 K/W 003aab020 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10−1 0.1 0.05 0.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -20 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12 and 13 - - 3.75 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 and 12 - 1.7 2 mΩ IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 16 - 0.85 1.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit tf fall time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C - 119 - ns LD internal drain inductance from upper edge of drain mounting base to centre of die; Tj = 25 °C - 2.5 - nH LS internal source inductance from source lead 6 mm from package to source bond pad; Tj = 25 °C - 7.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab005 300 20 10 7 6.5 ID (A) 003aab083 6 RDSon (mΩ) VGS (V) = 6 5.5 5 VGS (V) = 6 200 4 5.5 3 7 100 8 5 2 10 20 4.5 1 0 0 2 4 6 8 0 10 VDS (V) T j = 25 °C 100 200 ID (A) 300 T j = 25 °C Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values 03aa35 10−1 ID (A) Fig 9.
PAGE 9
BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab082 3.5 RDSon (mΩ) 03aa27 2 a 3 1.5 2.5 1 2 0.5 1.5 0 -60 1 5 10 15 VGS (V) 20 T j = 25 °C; ID = 25 A a= Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aab011 10 VGS (V) 0 60 120 Tj (°C) 180 R DSon R DSon (25°C ) Fig 13.
PAGE 10
BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab012 200 IS (A) 150 100 Tj = 175 °C Tj = 25 °C 50 0 0.0 0.5 1.0 1.5 VSD (V) 2.0 VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values BUK762R0-40C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 8. Soldering 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 msd057 occupied area solder paste Fig 18. Reflow soldering footprint for SOT404 BUK762R0-40C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK762R0-40C_2 20070820 Product data sheet - BUK762R0-40C_1 Modifications: BUK762R0-40C_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK762R0-40C NXP Semiconductors N-channel TrenchMOS standard level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . .