Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK763R1-40B,118, MOSFET

BUK75/763R1-40B

TrenchMOS™ standard level FET

Rev. 02 — 16 October 2002 Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive TrenchMOS™ technology.

Product availability:

BUK753R1-40B in SOT78 (TO-220AB)

BUK763R1-40B in SOT404 (D

-PAK).

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

■ Very low on-state resistance ■ Q101 compliant

■ 175 °C rated ■ Standard level compatible.

■ Automotive systems ■ 12 V loads

■ Motors, lamps and solenoids ■ General purpose power switching.

■ E

DS(AL)S

≤ 1.6 J ■ R

DSon

= 2.6 mΩ (typ)

■ I

≤ 75 A ■ P

tot

≤ 300 W

Table 1: Pinning - SOT78 and SOT404, simpliﬁed outlines and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB) SOT404 (D

-PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base,

connected to

drain (d)

MBK106

MBK116

MBB076

Summary of content (15 pages)

PAGE 1
BUK75/763R1-40B TrenchMOS™ standard level FET Rev. 02 — 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features ■ Very low on-state resistance ■ 175 °C rated ■ Q101 compliant ■ Standard level compatible. 1.
PAGE 2
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 3
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 03na19 120 03nh38 250 ID (A) Pder (%) 200 80 150 100 40 Capped at 75 A due to package 50 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature.
PAGE 4
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting Figure 4 base Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit - - 0.5 K/W SOT78 (TO-220AB) vertical in still air - 60 - K/W SOT404 (D2-PAK) minimum footprint; mounted on a PCB - 50 - K/W 4.
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BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 40 - - V Tj = −55 °C 36 - - V Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V - 0.02 1 µA Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.
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BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET Table 4: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 40 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 20 V 65 - ns 103 - nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 03nh33 ID 400 (A) 350 03nh32 6 8 20 10 7 RDSon (mΩ) 5 300 6 250 4 200 150 VGS = 5 V 100 3 50 4 2 0 0 2 4 6 8 5 10 VDS (V) Tj = 25 °C; tp = 300 µs 10 15 20 VGS (V) Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
PAGE 8
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 03aa32 5 03aa35 10-1 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 0 60 120 Tj (°C) 180 min 0 typ 2 max 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage.
PAGE 9
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 03nh31 100 03nh29 10 VGS (V) ID (A) 80 8 60 6 VDD = 14 V 40 VDD = 32 V 4 20 2 Tj = 175 °C Tj = 25 °C 0 0 0 2 4 VGS (V) 6 0 20 40 60 80 100 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values.
PAGE 10
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.
PAGE 11
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
PAGE 12
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 7. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 10274 Product data Rev.
PAGE 13
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 8. Revision history Table 5: Revision history Rev Date 02 20021016 CPCN Description - Product data; second version; supersedes Rev 01 of 20020409 (9397 750 09489). • Description in Section 1 changed from: N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
PAGE 14
BUK75/763R1-40B Philips Semiconductors TrenchMOS™ standard level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
PAGE 15
Philips Semiconductors BUK75/763R1-40B TrenchMOS™ standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . .