Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK764R0-55B,118, MOSFET

1. Product proﬁle

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using NXP High-Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

BUK754R0-55B; BUK764R0-55B

N-channel TrenchMOS standard level FET

Rev. 04 — 4 October 2007 Product data sheet

n Very low on-state resistance n Q101 compliant

n 175 °C rated n Standard level compatible

n Automotive systems n General purpose power switching

n Motors, lamps and solenoids n 12 V and 24 V loads

n E

DS(AL)S

≤ 1.2 J n R

DSon

= 3.4 mΩ (typ)

n I

≤ 75 A n P

tot

≤ 300 W

Table 1. Pinning

Pin Description Simpliﬁed outline Symbol

1 gate (G)

SOT78A (TO-220AB)

SOT404 (D2PAK)

2 drain (D)

3 source (S)

mb mounting base; connected to

drain (D)

123

03ab54

mbb076

Summary of content (14 pages)

PAGE 1
BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features n Very low on-state resistance n 175 °C rated n Q101 compliant n Standard level compatible 1.
PAGE 2
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUK754R0-55B SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A BUK764R0-55B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 4. Limiting values Table 3.
PAGE 3
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03na19 120 001aaf871 200 ID (A) Pder (%) 150 80 100 (1) 40 50 0 0 0 50 100 150 200 25 75 125 Tmb (°C) 175 Tmb (°C) VGS ≥ 10 V P tot P der = ------------------------ × 100 % P tot ( 25°C ) (1) Capped at 75 A due to package. Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2.
PAGE 4
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient Conditions Min Typ Max Unit - - 0.
PAGE 5
NXP Semiconductors BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified.
PAGE 6
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03nh22 300 ID 20 (A) 10 250 7 6.5 03nh21 7 RDSon (m Ω) 6 6 5.5 200 150 5 5 100 4.5 4 50 VGS (V) = 4 0 3 0 2 4 6 8 VDS (V) 10 5 Tj = 25 °C 10 15 VGS (V) 20 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6.
PAGE 7
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 2 min 10−2 max typ 10−3 min 10−4 typ max 10−5 1 0 −60 0 60 120 10−6 180 0 Tj (°C) 2 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10.
PAGE 8
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 03nh20 100 03nh18 10 ID (A) VGS (V) 80 8 60 6 VDS (V) = 14 40 VDS (V) = 44 4 Tj = 175 °C 20 2 Tj = 25 °C 0 0 0 2 4 6 VGS (V) 0 20 40 60 80 100 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03nh17 100 ID (A) Fig 14.
PAGE 9
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78A A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.
PAGE 10
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
PAGE 11
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 8. Soldering 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 msd057 occupied area solder paste Fig 19. Reflow soldering footprint for SOT404 BUK75_764R0-55B_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
PAGE 12
BUK754R0-55B; BUK764R0-55B NXP Semiconductors N-channel TrenchMOS standard level FET 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK75_764R0-55B_4 20071004 Product data sheet - BUK75_764R0-55B_3 Product data sheet - BUK75_764R0_55B-02 Modifications: BUK75_764R0-55B_3 Modifications: • Figure 7 updated.
PAGE 13
NXP Semiconductors BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 14
NXP Semiconductors BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .