Datasheet

1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
 AEC-Q101 compliant
 Avalanche robust
 Suitable for standard level gate drive
 Suitable for thermally demanding
environment due to 175 °C rating
1.3 Applications
 12 V Motor, lamp and solenoid loads
 High performance automotive power
systems
 High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
D2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 75 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
; see Figure 4
[1][2]
- - 100 A
P
tot
total power
dissipation
T
mb
=25°C; see Figure 2 - - 333 W