Datasheet

1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Repetitive avalanche rated
 Suitable for thermally demanding
environments due to 175 °C rating
 True standard level gate with VGS(th)
rating of greater than 1V at 175 °C
1.3 Applications
 12 V Automotive systems
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
[1] Continuous current is limited by package.
BUK768R1-40E
N-channel TrenchMOS standard level FET
Rev. 1.1 — 10 July 2012 Product data sheet
D2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
[1]
--75A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --96W
Static characteristics
R
DSon
drain-source on-state resistance V
GS
=10V; I
D
=20A; T
j
=25°C;
see Figure 11
-5.67.2mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=20A;
V
DS
= 32 V; see Figure 13;
see Figure 14
-7.4-nC