Datasheet

BUK7907-55ATE
N-channel TrenchPLUS standard level FET
Rev. 03 — 9 February 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
 Allows responsive temperature
monitoring due to integrated
temperature sensor
 Q101 compliant
 Electrostatically robust due to
integrated protection diodes
 Low conduction losses due to low
on-state resistance
1.3 Applications
 12 V and 24 V high power motor
drives
 Automotive and general purpose
power switching
 Electrical Power Assisted Steering
(EPAS)
 Protected drive for lamps
1.4 Quick reference data
[1] Current is limited by power dissipation chip rating.
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 55 V
I
D
drain current V
GS
=10V; T
mb
= 25 °C; see Figure 2; see Figure 3 [1] - - 140 A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 1 - - 272 W
T
j
junction temperature -55 - 175 °C
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=50A; T
j
= 175 °C; see Figure 7;
see Figure 8
--14mΩ
V
GS
=10V; I
D
=50A; T
j
=25°C; see Figure 7;
see Figure 8
-5.87mΩ
S
F(TSD)
temperature sense diode
temperature coefficient
I
F
= 250 µA; T
j
>-55°C; T
j
< 175 °C -1.4 -1.54 -1.68 mV/K
V
F(TSD)
temperature sense diode
forward voltage
I
F
= 250 µA; T
j
= 25 °C 648 658 668 mV