Datasheet

BUK7908-40AIE_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 17 February 2009 6 of 15
NXP Semiconductors
BUK7908-40AIE
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=2C 40 - - V
I
D
=0.25mA; V
GS
=0V; T
j
=-5C 36 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
=2C;
see Figure 9
234V
I
D
=1mA; V
DS
= V
GS
; T
j
= 175 °C;
see Figure 9
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=-5C;
see Figure 9
--4.4V
I
DSS
drain leakage current V
DS
=40V; V
GS
=0V; T
j
=2C - 0.1 10 µA
V
DS
=40V; V
GS
=0V; T
j
= 175 °C - - 250 µA
V
(BR)GSS
gate-source breakdown
voltage
I
G
=1mA; V
DS
=0V; T
j
>-5C;
T
j
< 175 °C
20 22 - V
I
G
=-1mA; V
DS
=0V; T
j
>-5C;
T
j
< 175 °C
20 22 - V
I
GSS
gate leakage current V
DS
=0V; V
GS
=10V; T
j
= 25 °C - 22 300 nA
V
DS
=0V; V
GS
=-10V; T
j
= 25 °C - 22 300 nA
V
DS
=0V; V
GS
=10V; T
j
=175°C --10µA
V
DS
=0V; V
GS
=-10V; T
j
=175°C --10µA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=50A; T
j
=2C;
see Figure 7; see Figure 8
-68m
V
GS
=10V; I
D
=50A; T
j
= 175 °C;
see Figure 7
; see Figure 8
--15.2m
R
(D-ISENSE)
on
drain-ISENSE on-state
resistance
V
GS
=10V; I
D
=10mA; T
j
= 25 °C 1.59 1.87 2.2
V
GS
=10V; I
D
=10mA; T
j
= 175 °C 3.02 3.55 4.18
I
D
/I
sense
ratio of drain current to
sense current
V
GS
>10V; T
j
>-5C; T
j
< 175 °C 450 500 550
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=32V; V
GS
=10V;
T
j
=2C; see Figure 14
-7884nC
Q
GS
gate-source charge - 14 16 nC
Q
GD
gate-drain charge - 34 36 nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=2C; see Figure 12
- 2670 3140 pF
C
oss
output capacitance - 900 1053 pF
C
rss
reverse transfer
capacitance
- 560 653 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2; V
GS
=10V;
R
G(ext)
10 ; T
j
=2C
-19-ns
t
r
rise time - 76 - ns
t
d(off)
turn-off delay time - 121 - ns
t
f
fall time - 122 - ns