Datasheet

BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
Rev. 05 — 16 February 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
 Allows responsive temperature
monitoring due to integrated
temperature sensor
 Electrostatically robust due to
integrated protection diodes
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Reduced component count due to
integrated current sensor
1.3 Applications
 Automotive and general purpose
power switching
 Electrical Power Assisted Steering
(EPAS)
 Fan control
 Variable valve timing for engines
1.4 Quick reference data
[1] Current is limited by power dissipation chip rating.
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current V
GS
=10V; T
mb
=25°C; see Figure 2;
see Figure 3
[1] - - 155 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=50A; T
j
=25°C; see
Figure 7; see Figure 8
-4.76mΩ
I
D
/I
sense
ratio of drain current to
sense current
T
j
>-55°C; T
j
< 175 °C; V
GS
= 10 V 585 615 645
S
F(TSD)
temperature sense diode
temperature coefficient
I
F
= 250 µA; T
j
>-55°C; T
j
< 175 °C -1.4 -1.54 -1.68 mV/K
V
F(TSD)
temperature sense diode
forward voltage
I
F
= 250 µA; T
j
= 25 °C 648 658 668 mV