Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK7E2R3-40C,127, MOSFET

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

Rev. 03 — 26 January 2009 Product data sheet

1. Product profile

1.1 General description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using advanced TrenchMOS technology. This product has been designed

and qualified to the appropriate AEC standard for use in high performance automotive

applications.

1.2 Features and benefits

 AEC Q101 compliant

 Avalanche robust

 Suitable for standard level gate drive

 Suitable for thermally demanding

environment up to 175°C rating

1.3 Applications

 12V Motor, lamp and solenoid loads

 High performance automotive power

systems

 High performance Pulse Width

Modulation (PWM) applications

1.4 Quick reference data

[1] Refer to document 9397 750 12572 for further information.

[2] Continuous current is limited by package.

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 40 V

drain current V

=10V; T

=25°C;

see Figure 1

; see Figure 3;

[1]

[2]

- - 100 A

tot

total power

dissipation

= 25 °C; see Figure 2 - - 333 W

Static characteristics

DSon

drain-source

on-state resistance

=10V; I

=25A;

= 25 °C; see Figure 12;

see Figure 13

- 1.96 2.3 mΩ

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

= 100 A; V

sup

≤ 40 V;

=50Ω; V

=10V;

j(init)

= 25 °C; unclamped

--1.2J

Summary of content (14 pages)

PAGE 1
BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 — 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.
PAGE 2
BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 SOT226 (TO-220AB; I2PAK) 3. Ordering information Table 3.
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BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab004 300 ID (A) 03aa16 120 Pder (%) 200 80 100 40 (1) 0 0 0 Fig 1. 50 100 150 Tmb (°C) 200 Continuous drain current as a function of mounting base temperature 0 50 100 150 200 Tmb (°C) Fig 2.
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BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab013 103 IAL (A) 102 (1) (2) 10 (3) 1 10-3 Fig 4. 10-2 10-1 1 tAL (ms) 10 Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7E2R3-40C_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from see Figure 5 junction to mounting base - - 0.45 K/W thermal resistance from vertical in free air junction to ambient - 50 - K/W 003aab020 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10−1 0.1 0.05 0.02 10−2 δ= P tp T single shot t tp T 10−3 10−6 Fig 5.
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BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 6.
PAGE 8
BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab005 300 20 10 7 6.5 ID (A) 003aab007 6 RDSon (mΩ) VGS (V) = 6 VGS (V) = 5.5 5 6.5 200 4 5.5 3 7 100 5 8 10 2 20 4.5 0 1 0 Fig 6. 2 4 6 8 10 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values 003aab008 180 0 100 200 300 ID (A) Fig 7.
PAGE 9
BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 typ max 10−3 typ 2 min 10−2 max 10−4 min 10−5 1 0 −60 10−6 0 60 120 0 180 2 4 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aab006 4 6 VGS (V) 03aa27 2 a RDSon (mΩ) 1.5 3 1 2 0.5 1 5 10 15 VGS (V) 20 Fig 12.
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BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab012 200 003aab011 10 VGS (V) IS (A) 8 150 VDD = 14 V VDD = 32 V 6 100 4 Tj = 175 °C Tj = 25 °C 50 2 0 0.0 0 0.5 1.0 1.5 VSD (V) 0 2.0 Fig 14. Source current as a function of source-drain voltage; typical values 50 100 150 QG (nC) 200 Fig 15. Gate-source voltage as a function of gate charge; typical values 003aab009 14000 Ciss C (pF) 10500 Coss 7000 Crss 3500 0 10−2 10−1 1 102 10 VDS (V) Fig 16.
PAGE 11
BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 A A1 E D1 mounting base D L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D max D1 E e L L1 Q mm 4.5 4.1 1.40 1.27 0.85 0.60 1.3 1.0 0.7 0.4 11 1.6 1.2 10.3 9.7 2.54 15.0 13.5 3.30 2.79 2.6 2.
PAGE 12
BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7E2R3-40C_3 20090126 Product data sheet - BUK75_7E2R3-40C_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate.
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BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK7E2R3-40C NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . .