Datasheet

BUK7Y10-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 9 April 2010 5 of 14
NXP Semiconductors
BUK7Y10-30B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
003aad628
10
-1
1
10
10
2
10
3
10
-1
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
DC
Limit R
DSon
= V
DS
/ I
D
100 ms
10 ms
1 ms
100 μs
t
p
= 10 μs
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
see Figure 5 --1.76K/W
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
003aac482
10
-2
10
-1
1
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th (j-mb)
(K/W)
δ = 0.5
0.2
0.1
0.02
single shot
0.05
t
p
T
P
t
t
p
T
δ =