Datasheet

1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 26 May 2008 Product data sheet
 175 °C rated  Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
 12 V loads  Air bag
 Automotive ABS systems  Automotive transmission control
 Fuel pump and injection  Motors, lamps and solenoids
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C --40V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1 and 4
--58A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --85W
Dynamic characteristics
Q
GD
gate-drain charge I
D
=10A; V
DS
=32V;
V
GS
= 10 V; see Figure 14
-5-nC
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C; see Figure 13 and
12
-1113mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=58A; V
sup
≤ 40 V;
R
GS
=50Ω; V
GS
=10V;
T
j(init)
=25°C; unclamped
--85mJ