Datasheet

NXP Semiconductors
BUK7Y153-100E
N-channel 100 V, 153 mΩ standard level MOSFET in LFPAK56
BUK7Y153-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 8 May 2013 2 / 13
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 S source
4 G gate
mb D mounting base; connected to
drain
mb
1 2 3 4
LFPAK56; Power-
SO8 (SOT669)
S
D
G
mbb076
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BUK7Y153-100E LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
7. Marking
Table 4. Marking codes
Type number Marking code
BUK7Y153-100E 715310E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage R
GS
= 20 kΩ - 100 V
V
GS
gate-source voltage T
j
≤ 175 °C; DC -20 20 V
T
mb
= 25 °C; V
GS
= 10 V; Fig. 1 - 9.4 AI
D
drain current
T
mb
= 100 °C; V
GS
= 10 V; Fig. 1 - 6.7 A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs; Fig. 4 - 37.5 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - 37.3 W
T
stg
storage temperature -55 175 °C