Datasheet

NXP Semiconductors
BUK7Y4R4-40E
N-channel 40 V, 4.4 mΩ standard level MOSFET in LFPAK56
BUK7Y4R4-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 7 May 2013 7 / 13
003aai632
0
40
80
120
160
0 2 4 6 8
V
GS
(V)
I
D
(A)
T
j
= 25 °CT
j
= 175 °C
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
003aah027
0
1
2
3
4
5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
003aah028
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0 2 4 6
V
GS
(V)
I
D
(A)
maxtyp
min
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
003aai635
0
5
10
15
20
0 20 40 60 80 100
I
D
(A)
R
DSon
(mΩ)
V
GS
(V) = 10
7
5 5.5
6
T
j
= 25 °C; t
p
= 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values