Datasheet

BUK9207-30B
N-channel TrenchMOS logic level FET
Rev. 03 — 16 June 2010 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 185°C --30V
I
D
drain current V
GS
=5V; T
mb
=25°C;
see Figure 1
; see Figure 3
[1]
--75A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --167W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C
-4.45mΩ
V
GS
=5V; I
D
=25A;
T
j
=25°C; see Figure 9;
see Figure 10
-5.97mΩ