Datasheet

D
P
A
K
BUK92150-55A
N-channel TrenchMOS logic level FET
12 June 2014 Product data sheet
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1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
•
Low conduction losses due to low on-state resistance
•
Q101 compliant
•
Suitable for logic level gate drive sources
•
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
•
12 V and 24 V loads
•
Automotive and general purpose power switching
•
Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 55 V
I
D
drain current V
GS
= 5 V; T
mb
= 25 °C; Fig. 2; Fig. 3 - - 11 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 36 W
Static characteristics
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C - 97 125 mΩ
V
GS
= 5 V; I
D
= 5 A; T
j
= 175 °C;
Fig. 11; Fig. 12
- - 280 mΩ
V
GS
= 4.5 V; I
D
= 5 A; T
j
= 25 °C - - 155 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C; Fig. 11;
Fig. 12
- 120 140 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 5 V; I
D
= 5 A; V
DS
= 44 V;
T
j
= 25 °C; Fig. 13
- 2.6 - nC