Datasheet

BUK9520-100B
N-channel TrenchMOS logic level FET
Rev. 01 — 6 May 2009 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 AEC-Q101 compliant
 Low conduction losses due to low
on-state resistance
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V, 24 V and 42 V loads
 Automotive and general purpose
power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
=5V; T
mb
=25°C;
see Figure 1
; see Figure 3
--63A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 203 W
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=63A; V
sup
≤ 100 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
- - 222 mJ
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 4.5 V; I
D
=25A;
T
j
= 25 °C; see Figure 11;
see Figure 12
- 16.4 22.3 mΩ
V
GS
=5V; I
D
=25A;
T
j
= 25 °C; see Figure 12;
see Figure 11
- 16.2 20 mΩ