Datasheet

1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 AEC Q101 compliant  Low conduction losses due to low
on-state resistance
1.3 Applications
 Automotive and general purpose
power switching
1.4 Quick reference data
BUK9605-30A
N-channel TrenchMOS logic level FET
Rev. 03 — 19 April 2011 Product data sheet
D2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 30 V
I
D
drain current T
mb
=25°C --75A
P
tot
total power dissipation - - 230 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=25A;
T
j
=25°C
-4.35mΩ
V
GS
=10V; I
D
=25A;
T
j
=25°C
-3.94.6mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=75A; V
sup
≤ 25 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
- - 500 mJ