Datasheet

BUK9506-55B
N-channel TrenchMOS FET
Rev. 04 — 23 July 2009 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology. This product has been designed and qualified to the appropriate
AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V and 24 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 55 V
I
D
drain current V
GS
=5V; T
mb
=25°C;
see Figure 1
and 3
[1]
--75A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 258 W
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=75A; V
sup
≤ 55 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
- - 679 mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=5V; I
D
=25A;
V
DS
=44V; T
j
=25°C;
see Figure 14 and 15
-22-nC