Datasheet

BUK9508-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 June 2010 2 of 14
NXP Semiconductors
BUK9508-55B
N-channel TrenchMOS logic level FET
[1] Continuous current is limited by package.
2. Pinning information
3. Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=75A; V
sup
≤ 55 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
--352mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=5V; I
D
=25A;
V
DS
=44V; T
j
=25°C;
see Figure 13
-16-nC
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT78 (TO-220AB)
2 D drain
3Ssource
mb D mounting base; connected to
drain
12
mb
3
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK9508-55B TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78