Datasheet

Philips Semiconductors Product specification
TrenchMOS transistor BUK9515-100A
Logic level FET BUK9615-100A
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions: I
D
= 25 A;
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.9. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
0246810
0
50
100
150
200
250
ID/A
VDS/V
VGS/V =
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
5.0
10.0
0 0.5 1 1.5 2 2.5 3 3.5
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
0 20406080100
11
12
13
14
15
16
17
18
19
20
RDS(ON)/mOhm
ID/A
VGS/V =
3.0
3.2
3.4
3.6
4.0
5.0
0 20406080100
0
50
100
150
gfs/S
ID/A
345678910
10.5
11
11.5
12
12.5
13
13.5
14
14.5
15
RDS(ON)/mOhm
VGS/V
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Tmb / degC
a
Rds(on) normalised to 25degC
November 1999 4 Rev 1.000