Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK9616-75B,118, MOSFET

BUK95/9616-75B

TrenchMOS™ logic level FET

Rev. 01 — 23 April 2003 Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability:

BUK9516-75B in SOT78 (TO-220AB)

BUK9616-75B in SOT404 (D

-PAK).

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

■ Very low on-state resistance ■ Q101 compliant

■ 175 °C rated ■ Logic level compatible.

■ Automotive systems ■ 12 V, 24 V and 42 V loads

■ Motors, lamps and solenoids ■ General purpose power switching.

■ E

DS(AL)S

≤ 140 mJ ■ R

DSon

=14mΩ (typ)

■ I

≤ 67 A ■ P

tot

≤ 157 W.

Table 1: Pinning - SOT78 and SOT404 simpliﬁed outlines and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB)

SOT404 (D

-PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base;

connected to

drain (d)

MBK106

MBK116

MBB076

Summary of content (15 pages)

PAGE 1
BUK95/9616-75B TrenchMOS™ logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9516-75B in SOT78 (TO-220AB) BUK9616-75B in SOT404 (D2-PAK). 1.2 Features ■ Very low on-state resistance ■ 175 °C rated ■ Q101 compliant ■ Logic level compatible. 1.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 03na19 120 03nn32 80 ID (A) Pder (%) 60 80 40 40 20 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 5 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Figure 4 - - 0.95 K/W SOT78 (TO-220AB) vertical in still air - 60 - K/W SOT404 (D2-PAK) minimum footprint; mounted on a PCB - 50 - K/W Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient 4.1 Transient thermal impedance 03nn31 1 δ = 0.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 75 - - V Tj = −55 °C 70 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 1.1 1.5 2 V Tj = 175 °C 0.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET Table 4: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V 96 - ns 138 - nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 03nn27 200 Label is VGS (V) ID (A) RDSon (mΩ) 4.8 4.6 10 150 03nn26 30 5 4.4 20 4.2 4 100 3.8 3.6 10 3.4 50 3.2 3 2.8 2.6 2.4 0 0 2 4 6 8 0 10 VDS (V) Tj = 25 °C; tp = 300 µs 5 10 VGS (V) 15 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03nn28 35 3.2 RDSon (mΩ) 30 0 Fig 6.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 10-1 03ng52 2.5 VGS(th) 03ng53 ID (A) (V) max 10-2 2.0 min 1.0 min -3 10 typ 1.5 typ max 10-4 10-5 0.5 10-6 0.0 -60 0 60 120 Tj (ºC) 180 0 0.5 1 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nn24 80 Fig 10. Sub-threshold drain current as a function of gate-source voltage.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 03nn25 100 03nn23 5 VGS ID (A) (V) 4 VDD = 14 V 75 VDD = 60 V 3 50 2 25 Tj = 175 °C Tj = 25 °C 1 0 0 0 1 2 3 4 5 0 VGS (V) 10 20 30 QG (nC) 40 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03nn22 100 IS (A) 75 50 25 Tj = 175 °C Tj = 25 °C 0 0.0 0.
PAGE 10
BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 7. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11246 Product data Rev.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 8. Revision history Table 5: Revision history Rev Date 01 20030423 CPCN Description - Product data (9397 750 11246) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11246 Product data Rev.
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BUK95/9616-75B Philips Semiconductors TrenchMOS™ logic level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
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Philips Semiconductors BUK95/9616-75B TrenchMOS™ logic level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . .