Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK963R2-40B,118, MOSFET

BUK95/96/9E3R2-40B

TrenchMOS™ logic level FET

Rev. 04 — 14 November 2003 Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

■ Very low on-state resistance ■ Q101 compliant

■ 175 °C rated ■ Logic level compatible.

■ Automotive systems ■ 12 V loads

■ Motors, lamps and solenoids ■ General purpose power switching.

■ E

DS(AL)S

≤ 1.2 J ■ R

DSon

= 2.7 mΩ (typ)

■ I

≤ 100 A ■ P

tot

≤ 300 W.

Table 1: Pinning - SOT78, SOT404, and SOT226 simpliﬁed outlines and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB)

SOT404 (D

-PAK)

SOT226 (I

-PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base,

connected to

drain (d)

MBK106

MBK116

MBK112

123

MBB076

Summary of content (16 pages)

PAGE 1
BUK95/96/9E3R2-40B TrenchMOS™ logic level FET Rev. 04 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features ■ Very low on-state resistance ■ 175 °C rated ■ Q101 compliant ■ Logic level compatible. 1.3 Applications ■ Automotive systems ■ Motors, lamps and solenoids ■ 12 V loads ■ General purpose power switching. 1.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 3.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 03na19 120 03nh38 250 Pder ID (A) (%) 200 80 150 100 40 Capped at 100 A due to package 50 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (˚C) VGS ≥ 5 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting Figure 4 base Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit - - 0.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 40 - - V Tj = −55 °C 36 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 1.1 1.5 2 V Tj = 175 °C 0.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 40 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 20 V 70 - ns 127 - nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 03nh56 350 ID (A) 10 5 4 03nh55 5 Label is VGS (V) 3.8 RDSon (mΩ) 280 3.6 4 3.4 210 3.2 140 3 3 2.8 70 2.6 2.4 2.2 0 0 2 2 4 6 8 10 VDS (V) Tj = 25 °C; tp = 300 µs 3 15 VGS (V) Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nh57 8 3 RDSon (mΩ) 11 Tj = 25 °C; ID = 25 A Fig 5.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 03ng52 2.5 VGS(th) 10-1 03ng53 ID (A) (V) max 10-2 2.0 min 1.0 min -3 10 typ 1.5 typ max 10-4 10-5 0.5 10-6 0.0 -60 0 60 120 Tj (°C) 180 0 0.5 1 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nh53 200 gfs (S) Fig 10. Sub-threshold drain current as a function of gate-source voltage.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 03nh54 100 03nh52 5 VGS (V) ID (A) 4 75 VDD = 14 V VDD = 32 V 3 50 2 25 Tj = 175 °C 1 Tj = 25 °C 0 0 0 1 2 VGS (V) 3 0 25 50 75 QG (nC) 100 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03nh51 100 IS (A) 75 50 Tj = 175 °C Tj = 25 °C 25 0 0.0 0.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET Plastic single-ended package (Philips version of I 2-PAK); low-profile 3 lead TO-220AB SOT226 A A1 E D1 mounting base D L1 L2 Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max Q mm 4.5 4.1 1.40 1.27 0.9 0.7 1.3 1.0 0.7 0.4 9.65 8.65 1.5 1.1 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 2.6 2.2 Note 1.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 8. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 19. Reflow soldering footprint for SOT404. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12049 Product data Rev.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 9. Revision history Table 6: Revision history Rev Date 04 20031114 CPCN Description - Product data (9397 750 12049) Modifications: • 03 20030116 - Addition of BUK9E3R2-40B type to data sheet. Product data (9397 750 10844) Modifications: • Maximum drain current (DC) changed from 75 A to 100 A in Section 4, Limiting values.
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BUK95/96/9E3R2-40B Philips Semiconductors TrenchMOS™ logic level FET 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
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Philips Semiconductors BUK95/96/9E3R2-40B TrenchMOS™ logic level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . .