Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK964R4-40B,118, MOSFET

BUK95/96/9E4R4-40B

TrenchMOS™ logic level FET

Rev. 02 — 13 October 2003 Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

■ Very low on-state resistance ■ Q101 compliant

■ 175 °C rated ■ Logic level compatible.

■ Automotive systems ■ 12 V loads

■ Motors, lamps and solenoids ■ General purpose power switching.

■ E

DS(AL)S

≤ 961 mJ ■ R

DSon

= 3.9 mΩ (typ)

■ I

≤ 75 A ■ P

tot

≤ 254 W.

Table 1: Pinning - SOT78, SOT404, and SOT226 simpliﬁed outlines and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB)

SOT404 (D

-PAK) SOT226 (I

-PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base,

connected to

drain (d)

MBK106

MBK116

MBK112

123

MBB076

Summary of content (16 pages)

PAGE 1
BUK95/96/9E4R4-40B TrenchMOS™ logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features ■ Very low on-state resistance ■ 175 °C rated ■ Q101 compliant ■ Logic level compatible. 1.3 Applications ■ Automotive systems ■ Motors, lamps and solenoids ■ 12 V loads ■ General purpose power switching. 1.
PAGE 2
BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BUK954R4-40B TO-220AB Plastic single-ended heat-sink mounted package SOT78 BUK964R4-40B D2-PAK Plastic single-ended surface mounted package SOT404 BUK9E4R4-40B I2-PAK Plastic single-ended low-profile package SOT226 4.
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BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 03na19 120 03nl57 200 ID (A) Pder (%) 150 80 100 40 Capped at 75 A due to package 50 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 5 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature.
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BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting Figure 4 base Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit - - 0.59 K/W SOT78 (TO-220AB) vertical in still air - 60 - K/W SOT226 (I2-PAK) vertical in still air - 60 - K/W minimum footprint; mounted on a PCB - 50 - K/W SOT404 (D2-PAK) 5.
PAGE 5
BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 40 - - V Tj = −55 °C 36 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 1.1 1.5 2 V Tj = 175 °C 0.
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BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V 70 - ns 67 - nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 03nl86 350 10 ID (A) 4 03nl85 5 Label is VGS (V) 3.8 5 280 RDSon (mΩ) 3.6 3.4 210 3.2 4 3 140 2.8 70 2.6 2.4 2.2 0 0 2 4 3 6 8 10 VDS (V) Tj = 25 °C; tp = 300 µs 3 15 VGS (V) Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nl87 3 11 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
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BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 03ng52 2.5 VGS(th) 10-1 03ng53 ID (A) (V) max 10-2 2.0 min 1.0 min -3 10 typ 1.5 typ max 10-4 10-5 0.5 10-6 0.0 -60 0 60 120 Tj (°C) 180 0 0.5 1 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nl83 180 Fig 10. Sub-threshold drain current as a function of gate-source voltage.
PAGE 9
BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 03nl84 100 03nl82 5 VGS (V) ID (A) 4 75 VDD = 14 V 3 VDD = 32 V 50 2 25 Tj = 175 °C 1 Tj = 25 °C 0 0 0 1 2 VGS (V) 3 0 20 40 60 QG (nC) 80 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03nl81 100 IS (A) 75 50 Tj = 175 °C Tj = 25 °C 25 0 0.0 0.
PAGE 10
BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.
PAGE 11
BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET Plastic single-ended package; low-profile 3 lead TO-220AB SOT226 A A1 E D1 mounting base D L1 L2 Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max Q mm 4.5 4.1 1.40 1.27 0.9 0.7 1.3 1.0 0.7 0.4 9.65 8.65 1.5 1.1 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 2.6 2.2 Note 1. Terminals in this zone are not tinned.
PAGE 12
BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
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BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 8. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 19. Reflow soldering footprint for SOT404. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12051 Product data Rev.
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BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 9. Revision history Table 6: Revision history Rev Date 02 20031013 CPCN Description - Product data (9397 750 12051) Modifications: • 01 20030402 - Addition of BUK9E4R4-40B part to data sheet. Product data (9397 750 11134) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12051 Product data Rev.
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BUK95/96/9E4R4-40B Philips Semiconductors TrenchMOS™ logic level FET 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
PAGE 16
Philips Semiconductors BUK95/96/9E4R4-40B TrenchMOS™ logic level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . .