Datasheet

Philips Semiconductors
BUK95/96/9E4R4-40B
TrenchMOS™ logic level FET
Product data Rev. 02 — 13 October 2003 7 of 16
9397 750 12051
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
=25°C; t
p
= 300 µsT
j
=25°C; I
D
=25A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nl86
0
70
140
210
280
350
0246810
V
DS
(V)
I
D
(A)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
10
5
4 3.8
Label is V
GS
(V)
03nl85
3
4
5
3 7 11 15
V
GS
(V)
R
DSon
(m)
03nl87
3
4
5
6
7
8
0 70 140 210 280 350
I
D
(A)
R
DSon
(m)
Label V
GS
(V)
10
5
4
3 3.2
3.4
03aa27
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=